低功耗手機(jī)對(duì)講機(jī)專用晶振X1G005591001900
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X1G005591001100 | 25.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591001200 | 25.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591001300 | 20.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591001400 | 20.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591001500 | 50.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591001600 | 50.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591001700 | 48.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591001800 | 48.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591001900 | 24.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591002000 | 24.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591002100 | 40.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591002200 | 40.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591002300 | 16.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591002400 | 16.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591002500 | 12.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591002600 | 12.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591002700 | 10.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591002800 | 10.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591002900 | 27.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591003000 | 27.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591006700 | 6.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591006800 | 7.680000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591006900 | 74.250000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591007000 | 88.888000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591007100 | 88.888000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591007200 | 12.500000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591007300 | 148.500000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591007400 | 74.250000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591007500 | 57.272720MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591007600 | 37.125000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591007700 | 19.200000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591007800 | 6.005284MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591007900 | 57.209760MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591008000 | 10.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591008100 | 133.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591008200 | 32.400000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591008300 | 22.579200MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591008400 | 44.236800MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591008500 | 1.000000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591008600 | 4.915200MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591008700 | 1.843200MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591008800 | 33.333000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591008900 | 56.602205MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591009000 | 36.810000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591009200 | 16.384000MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005591009300 | 19.922944MHz | SG-8018CE | 3.20x2.50x1.20mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
愛普生可編程振蕩器的優(yōu)勢特點(diǎn)自然是其本身參數(shù)可以接受定制,既然是可編程的晶體振蕩器就意味著其頻點(diǎn)參數(shù)是可以根據(jù)客戶的需求定制,從頻點(diǎn)、工作電壓到頻率穩(wěn)定度等參數(shù)都可以定制。
在購買和選擇具體品牌的可編程晶振之前自然應(yīng)該了解下其特性,其中不可忽視的就是很多晶振都要面對(duì)的氣密性問題,因?yàn)榭删幊叹д袷遣捎萌詣?dòng)化的半導(dǎo)體工藝打造的,所以完全不存在氣密性問題而且還具備永不停振的優(yōu)勢。很多人容易把可編程晶振和溫補(bǔ)晶振弄混淆,其實(shí)就是因?yàn)榭删幊叹д癖旧硪簿邆錅囟茸詣?dòng)補(bǔ)償功能,除此之外低抖動(dòng)和低功耗以及耐高溫高壓等特點(diǎn)讓其成為手機(jī)對(duì)講機(jī)以及數(shù)碼相機(jī)等各種精密設(shè)備中不可缺少的。